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  bar digit led display 20 - aug. doc. no : qw0905- rev. : a date : - 2008 LBD336B-XX ligitek electronics co.,ltd. property of ligitek only LBD336B-XX data sheet
ligitek electronics co.,ltd. property of ligitek only part no. pin no. 1 lbd336b -xx ligitek 33.0(1.30") 4.0 0.5 11.0 (0.43") e ? 0.45 typ 6.4 (0.25") y 2.54*6=15.24(0.6") y g package dimensions LBD336B-XX 11.0 (0.43") 7.62 (0.3") b 1/10 page note : 1.all dimension are in millimeters and (lnch) tolerance is 0.25mm(0.01") unless otherwise noted. 2.specifications are subject to change without notice. . 3.film:temperature-resistant Q 100 c.
page ligitek electronics co.,ltd. property of ligitek only 4 d a 1 14 2 b c part no. internal circuit diagram LBD336B-XX 9 10 a bc 8 13 5 3 12 11 7 d f edp g LBD336B-XX 2/10
ligitek electronics co.,ltd. property of ligitek only cathode b 14. electrical connection 4. 9. 12. 13. 10. 11. 8. 7. 5. 6. part no. 2. 3. pin no. 1. LBD336B-XX cathode d cathode a cathode b cathode g cathode dp common anode cathode e cathode f nc LBD336B-XX cathode a cathode c cathode d cathode c 3/10 page
ligitek electronics co.,ltd. property of ligitek only vf(v) part selection and application information(ratings at 25) material gaasp/gap note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. LBD336B-XX part no common anode orange emitted yellow chip common cathode or anode 45 635 1.7 1.7 (nm) 35 p ( nm) 585 min. 1.7 part no. lbd336b -xx parameter forward current per chip absolute maximum ratings at ta=25 power dissipation per chip operating temperature storage temperature reverse current per any chip peak forward current per chip (duty 1/10,0.1ms pulse width) t opr tstg ir pd 60 -25 ~ +85 -25 ~ +85 100 10 i f i fp symbol ratings 20 80 y 30 120 e 2.1 2.1 --- --- --- --- 2:1 iv(mcd) typ. 2.1 min. --- electrical iv-m typ --- 100 a mw 30 120 g ma ma unit page 4/10 sbi 30 70 120 50 electrostatic discharge( * ) esd--- v static electricity or power surge will damage the led. use of a conductive wrist band or anti-electrosatic glove is recommended when handing these led. all devices, equipment and machinery must be properly grounded. * 500 max. 2.6 2.6 2.6 ingan/sic blue 43065 ---3.84.7 3.055.0 gap green 56530 gaasp/gap d ( nm) --- --- --- 465
forward voltage per chip spectral line half-width reverse current any chip luminous intensity matching ratio peak wavelength iv-m ir p vfif=10ma vr=5v if=20ma if=20ma a nm nm volt part no. LBD336B-XX test condition for each parameter ligitek electronics co.,ltd. property of ligitek only parameter symbol test condition unit 5/10 page dominant wavelength d nmif=20ma luminous intensity per chip iv mcd if=10ma forward voltage per chip vfvoltif=20ma
3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature 1.0 r e l a t i v e i n t e n s i t y @ 2 0 m a 550 wavelength (nm) 500 0.0 0.5 600650700 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 40 20 060100 80 ambient temperature( ) -40-20 02060 40100 80 3.0 2.5 2.0 1.5 1.0 0.5 0.0 ligitek electronics co.,ltd. property of ligitek only fig.2 relative intensity vs. forward current typical electro-optical characteristics curve 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 10 1.0 y chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.0 6/10 page forward current(ma) 1.0101001000 part no. LBD336B-XX
typical electro-optical characteristics curve page ligitek electronics co.,ltd. property of ligitek only 7/10 3.0 2.5 1.5 1.0 0.5 0.0 2.0 fig.4 relative intensity vs. temperature r e l a t i v e i n t e n s i t y @ 2 0 m a 600 wavelength (nm) 550 0.0 0.5 650700750 ambient temperature( ) fig.5 relative intensity vs. wavelength fig.3 forward voltage vs. temperature f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 1.0 -40 0.8 -20 1.0 0.9 1.1 1.2 r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 20 060 40100 80 100 20 ambient temperature( ) -20 -40 060 4080 3.0 2.5 2.0 1.5 1.0 0.5 0.0 fig.2 relative intensity vs. forward current 2.0 fig.1 forward current vs. forward voltage forward voltage(v) 100 f o r w a r d c u r r e n t ( m a ) 1.0 0.1 1.0 10 e chip 1000 r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 3.04.05.01000 forward current(ma) 1.010100 part no. LBD336B-XX
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 500550600650 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 3.5 g chip ligitek electronics co.,ltd. property of ligitek only typical electro-optical characteristics curve page8/10 part no. LBD336B-XX
10 r e l a t i v e i n t e n s i t y ( % ) 20 f o r w a r d c u r r e n t ( m a d c ) ambient temperature ( ) 25 0 0 10 5075100 lead temperature ( ) forward current (ma dc) fig.5 forward current vs. ambient temperature 30 40 10 0 5 0 25 30 1520 25 40 35 45 75 50 100 r e l a t i v e i n t e n s i t y 50 0 0 25 75 100 1 sbi chip r e l a t i v e i n t e n s i t y ( % ) 5 f o r w a r d c u r r e n t ( m a d c ) fig.3 relative intensity vs. forward current 125 2 1 0 4 35 forward voltage(v) fig.4 relative intensity vs. lead temperature 530 wavelength (nm) 430 380 480 0 680 580 630 25 15 10 20 fig.1 forward current vs. forward voltage 30 0.5 fig.2 relative intensity vs. wavelength 1.0 typical electro-optical characteristics curve page9/10 ligitek electronics co.,ltd. property of ligitek only part no. LBD336B-XX
ligitek electronics co.,ltd. property of ligitek only mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 mil-std-883:1008 jis c 7021: b-10 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 jis c 7021: b-12 mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles 1.t.sol=260 5 2.dwell time= 10 1sec. 1.t.sol=230 5 2.dwell time=5 1sec 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, +72hrs) solderability test solder resistance test low temperature storage test thermal shock test high temperature high humidity test operating life test high temperature storage test this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. this test intended to see soldering well performed or not. this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. the purpose of this test is the resistance of the device under tropical for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. reliability test: test item test condition description reference standard 10/10 page part no. LBD336B-XX


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